Direction Dependent Electrical and Optical Properties of Gallium Nitride Nanowires
نویسنده
چکیده
Gallium Nitride (GaN) nanowires were synthesized in two distinct directions <10-10> adirection and <0001> c-direction in a controlled manner using direct nitridation schemes. Field effect transistors based on individual GaN nanowires have been fabricated using the synthesized ‘a’ and ‘c’ direction nanowires. Gate dependent electrical transport measurements performed on the a-direction nanowires showed an increase in conductivity with the applied gate voltage while no gate dependent conductivity was observed in the case of ‘c’ direction nanowires. The electron mobility for the a-direction GaN nanowire FETs was estimated to be 170cm/V-s .Photo luminescence and ultra violet visible(UV vis) absorption spectroscopy measurements have shown that the band gap of nanowires grown in a-direction blue shifts by about 50-70meV when compared to the wires grown in cdirection.
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